? 2006 ixys corporation all rights reserved ds99684 (11/06) symbol test conditions maximum ratings v dss t j = 25 c to 175 c55v v dgr t j = 25 c to 175 c; r gs = 1 m ? 55 v v gsm transient 20 v i d25 t c = 25 c 220 a i lrms lead current limit, rms 75 a i dm t c = 25 c, pulse width limited by t jm 600 a i ar t c = 25 c25a e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 3 v/ns t j 175 c, r g = 5 ? p d t c = 25 c 430 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque 1.13 / 10 nm/lb.in. weight to-3p 5.5 g to-247 6 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a55v v gs(th) v ds = v gs , i d = 1 ma 2.0 4.0 v i gss v gs = 20 v, v ds = 0 v 200 na i dss v ds = v dss 5 a v gs = 0 v t j = 150 c 250 a r ds(on) v gs = 10 v, i d = 25 a, notes 1, 2 3.1 4.0 m ? trenchmv tm power mosfet n-channel enhancement mode avalanche rated ixth220n055t IXTQ220N055T v dss =55 v i d25 = 220 a r ds(on) 4.0 m ? ? ? ? ? to-3p (ixtq) g d s to-247 (ixth) g s d g = gate d = drain s = source tab = drain (tab) (tab) preliminary technical information features ultra-low on resistance unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect 175 c operating temperature advantages easy to mount space savings high power density applications automotive - motor drives - high side switch - 12v battery - abs systems dc/dc converters and off-line ups primary- side switch high current switching applications
ixys reserves the right to change limits, test conditions, and dimensions. ixth220n055t IXTQ220N055T symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 60 a, note 1 75 120 s c iss 7200 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1270 pf c rss 285 pf t d(on) resistive switching times 36 ns t r v gs = 10 v, v ds = 30 v, i d = 25 a 62 n s t d(off) r g = 5 ? (external) 53 n s t f 53 ns q g(on) 158 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 25 a 42 nc q gd 46 nc r thjc 0.35 c/w r thch 0.25 c/w source-drain diode symbol test conditions characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0 v 220 a i sm pulse width limited by t jm 600 a v sd i f = 25 a, v gs = 0 v, note 1 1.0 v t rr i f = 25 a, -di/dt = 100 a/ s70ns v r = 25 v, v gs = 0 v notes: 1. pulse test, t 300 s, duty cycle d 2 %; 2. on through-hole packages, r ds(on) kelvin test contact location must be 5 mm or less from the package body. to-3p (ixtq) outline pins: 1 - gate 2 - drain 3 - source 4, tab - drain to-247 ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre- production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 7,071,537
? 2006 ixys corporation all rights reserved ixth220n055t IXTQ220N055T fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 200 220 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 7v 5v fig. 2. extended output characteristics @ 25oc 0 40 80 120 160 200 240 280 320 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v ds - volts i d - amperes v gs = 10v 9v 8v 5v 7v 6v fig. 3. output characteristics @ 150oc 0 20 40 60 80 100 120 140 160 180 200 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 110a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 220a i d = 110a fig. 5. r ds(on) normalized to i d = 110a value vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 40 80 120 160 200 240 280 320 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit for to-263 (7-lead) external lead current limit for to-3p, to-220, & to-263
ixys reserves the right to change limits, test conditions, and dimensions. ixth220n055t IXTQ220N055T fig. 7. input admittance 0 30 60 90 120 150 180 210 240 270 3.5 4 4.5 5 5.5 6 6.5 v gs - volts i d - amperes t j = 150oc 25oc -40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 180 0 30 60 90 120 150 180 210 240 270 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 30 60 90 120 150 180 210 240 270 300 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v gs - volts v ds = 27.5v i d = 25a i g = 10ma fig. 11. capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2006 ixys corporation all rights reserved ixth220n055t IXTQ220N055T fig. 14. resistive turn-on rise time vs. drain current 25 30 35 40 45 50 55 60 65 70 75 25 30 35 40 45 50 i d - amperes t r - nanoseconds r g = 5 ? v gs = 10v v ds = 30v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 20 40 60 80 100 120 140 160 4 6 8 101214161820 r g - ohms t r - nanoseconds 30 35 40 45 50 55 60 65 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 30v i d = 50a, 25a fig. 16. resistive turn-off switching times vs. junction temperature 45 47 49 51 53 55 57 59 61 63 65 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 50 54 58 62 66 70 74 78 82 86 90 t d ( o f f ) - nanosecond s t f t d(off) - - - - r g = 5 ? , v gs = 10v v ds = 30v i d = 25a, 50a i d = 50a, 25a fig. 17. resistive turn-off switching times vs. drain current 46 48 50 52 54 56 58 60 62 64 24 28 32 36 40 44 48 i d - amperes t f - nanoseconds 48 52 56 60 64 68 72 76 80 84 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 5 ? , v gs = 10v v ds = 30v t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 20 25 30 35 40 45 50 55 60 65 70 75 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 5 ? v gs = 10v v ds = 30v i d = 50a i d = 25a fig. 18. resistive turn-off switching times vs. gate resistance 50 70 90 110 130 150 170 190 4 6 8 101214161820 r g - ohms t f - nanoseconds 50 80 110 140 170 200 230 260 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 30v i d = 50a i d = 25a ixys ref: t_220n055t (5v) 8-29-06-a.xls
|
